MRFE6S9046NR1 MRFE6S9046GNR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
70
14
24
0
75
C
VDD
= 28 Vdc
IDQ
= 300 mA
f = 940 MHz
TC
= ?30
C
25C
85C
?30
10
1
18
16
30
15
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
Gps
22
20
60
45
25C
85C
Figure 9. EVM versus Frequency
f, FREQUENCY (MHz)
Pout= 26.5
W Avg.
17.8 W Avg.
5 W Avg.
EVM, ERROR VECTOR MAGNITUDE (% rms)
980
0
6
900
3
1
970
930 960940
950
920
910
4
2
5
VDD
= 28 Vdc
IDQ
= 285
mA
EDGE Modulation
TC
= 85
C
25C
?30C
?75
?40
0
Pout, OUTPUT POWER (WATTS)
?50
?55
?60
?70
10
Figure 10. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL REGROWTH @ 400 kHz (dBc)
40 50
?65
VDD
= 28 Vdc, I
DQ
= 285
mA
f = 940
MHz, EDGE Modulation
TC
= 85
C
25C
?30C
?85
?50
0
Pout, OUTPUT POWER (WATTS)
?55
?60
?65
?70
?75
20
Figure 11. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL REGROWTH @ 600 kHz (dBc)
30 5040
VDD
= 28 Vdc, I
DQ
= 285
mA
f = 940
MHz, EDGE Modulation
Pout, OUTPUT POWER (WATTS) AVG.
60
20
0
10
1
35
65
59
41
5
17
?30C
23
85C
Figure 12. EVM and Drain Efficiency
versus Output Power
EVM, ERROR VECTOR MAGNITUDE (% rms)
TC
= ?30
C
EVM
VDD
= 28 Vdc, I
DQ
= 285
mA
f = 940
MHz, EDGE Modulation
980
16
22
900
TC
= ?30
C
25C
85C
21
20
19
18
17
910 930 950 970920 940 960
f, FREQUENCY (MHz)
Figure 13. Power Gain versus Frequency
G
ps
, POWER GAIN (dB)
VDD
= 28 Vdc
Pout
= 35 W CW
IDQ
= 300 mA
η
D
, DRAIN EFFICIENCY (%)
ηD
ηD
η
D
, DRAIN EFFICIENCY (%)
?45
20 30
?80
18
16
14
12
10
8
6
4
2
C
53
47
29
11
25
85C
10
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